The 19th American Conference on Crystal Growth and Epitaxy in conjunction with the 16th US Biennial Workshop on Organometallic Vapor Phase EpitaxyPASKOVA, Tania; CANEAU, Catherine; BHAT, Rajaram et al.Journal of crystal growth. 2014, Vol 393, issn 0022-0248, 178 p.Conference Proceedings

Future challenges for MOVPE: an industrial perspectiveBLAND, S. W.Journal of materials science. Materials in electronics. 2002, Vol 13, Num 11, pp 679-682, issn 0957-4522, 4 p.Article

15th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XV)CANEAU, Catherine; KUECH, Tom.Journal of crystal growth. 2011, Vol 315, Num 1, issn 0022-0248, 311 p.Conference Proceedings

The 16th International Conference on Crystal Growth (ICCG16)/The 14th International Conference on Vapor Growth and Epitaxy (ICVGE14), 8-13 August 2010, Beijing, ChinaCHEN, Chuangtian; KUECH, Thomas F; NISHINAGA, Tatau et al.Journal of crystal growth. 2011, Vol 318, Num 1, issn 0022-0248, 1203 p.Conference Proceedings

In-situ characterization of epitaxial semiconductor growth by reflectance anisotropy spectroscopyBHATTACHARYA, A; HABERLAND, K; POSER, F et al.SPIE proceedings series. 2002, pp 990-995, isbn 0-8194-4500-2, 2VolConference Paper

Infrared photoluminescence from α- and β-copper phthalocyanine nanostructuresTONG, W. Y; CHEN, H. Y; DJURISIC, A. B et al.Optical materials (Amsterdam). 2010, Vol 32, Num 9, pp 924-927, issn 0925-3467, 4 p.Article

New approaches for growth control of GaN-based HEMT structuresHARDTDEGEN, H; STEINS, R; KALUZA, N et al.Applied physics. A, Materials science & processing (Print). 2007, Vol 87, Num 3, pp 491-498, issn 0947-8396, 8 p.Article

Inhomogeneities in MOVPE InNYAMAMOTO, Akio; MIWA, Hiroshi; WEN JUN WANG et al.Physica status solidi. A. Applied research. 2006, Vol 203, Num 1, pp 135-141, issn 0031-8965, 7 p.Conference Paper

Observation of growth during the MOVPE of III-nitridesHARDTDEGEN, H; KALUZA, N; STEINS, R et al.Journal de physique. IV. 2006, Vol 132, pp 177-183, issn 1155-4339, 7 p.Conference Paper

Spectral Evidence of Si Complexes in HVPE-Grown GaAsBOHN, Matthew J; GUINEY, William; LYNCH, Candace et al.IEEE transactions on semiconductor manufacturing. 2011, Vol 24, Num 4, pp 519-522, issn 0894-6507, 4 p.Article

Black coatings: a reviewTAKADOUM, J.EPJ. Applied physics (Print). 2010, Vol 52, Num 3, issn 1286-0042, 30401.p1-30401.p7Article

Hillocks and hexagonal pits in a thick film grown by HVPEWEI, T. B; DUAN, R. F; WANG, J. X et al.Microelectronics journal. 2008, Vol 39, Num 12, pp 1556-1559, issn 0959-8324, 4 p.Article

Growth of N-polarity InN by ArF-laser assisted MOVPEYAMAMOTO, A; KASASHIMA, K; MIYANISHI, M et al.Physica status solidi. A. Applied research. 2006, Vol 203, Num 1, pp 112-115, issn 0031-8965, 4 p.Conference Paper

Mass flow and reaction analysis of the growth of GaN by HVPEKEMPISTY, P; GRZEGORY, I; BOCKOWSKI, M et al.Physica status solidi. A. Applied research. 2006, Vol 203, Num 1, pp 131-134, issn 0031-8965, 4 p.Conference Paper

Crystallization of GaN by HVPE on pressure grown seedsGRZEGORY, I; LUCZNIK, B; BOCKOWSKI, M et al.Physica status solidi. A, Applications and materials science (Print). 2006, Vol 203, Num 7, pp 1654-1657, issn 1862-6300, 4 p.Conference Paper

Analysis of TMGa/NH₃/H₂ reaction system in GaN-MOVPE growth by computational simulationHIRAKO, A; KOISO, S; OHKAWA, K et al.Physica status solidi. A, Applications and materials science (Print). 2006, Vol 203, Num 7, pp 1716-1719, issn 1862-6300, 4 p.Conference Paper

Thermodynamics on hydride vapor phase epitaxy of AlN using AlCl₃ and NH₃KUMAGAI, Y; TAKEMOTO, K; KIKUCHI, J et al.Physica status solidi. B. Basic research. 2006, Vol 243, Num 7, pp 1431-1435, issn 0370-1972, 5 p.Conference Paper

Characterisation of cubic SiC layers VPE grown on Si substrates of different conductivityFRIGERI, C; ATTOLINI, G; BOSI, M et al.Journal of materials science. Materials in electronics. 2008, Vol 19, issn 0957-4522, S303-S306, SUP1Conference Paper

MOVPE growth of InN with ammonia on sapphireDRAGO, M; VOGT, P; RICHTER, W et al.Physica status solidi. A. Applied research. 2006, Vol 203, Num 1, pp 116-126, issn 0031-8965, 11 p.Conference Paper

Evolution of the surface morphology of AlN epitaxial film by HVPEXIAOJING GONG; KE XU; JUN HUANG et al.Journal of crystal growth. 2015, Vol 409, pp 100-104, issn 0022-0248, 5 p.Article

Analysis of the VIS―NIR spectral reflectance of Bi/GaAs structures grown by MOVPE and UHVEHABCHI, M. M; MASSOUDI, I; REBEY, A et al.Journal of crystal growth. 2014, Vol 395, pp 26-30, issn 0022-0248, 5 p.Article

Antibacterial and barrier properties of oriented polymer films with ZnO thin films applied with atomic layer deposition at low temperaturesVÄHÄ-NISSI, Mika; PITKÄNEN, Marja; KARPPINEN, Maarit et al.Thin solid films. 2014, Vol 562, pp 331-337, issn 0040-6090, 7 p.Article

Atomic layer deposition of strontium titanate films from Sr(ⁱPr₃Cp)₂, Ti[N(CH₃)₂]₄ and H₂ORENTROP, S; MOEBUS, T; ABENDROTH, B et al.Thin solid films. 2014, Vol 550, pp 53-58, issn 0040-6090, 6 p.Article

Barrier properties of plastic films coated with an Al₂O₃ layer by roll-to-toll atomic layer depositionHIRVIKORPI, Terhi; LAINE, Risto; HARLIN, Ali et al.Thin solid films. 2014, Vol 550, pp 164-169, issn 0040-6090, 6 p.Article

Deflection of threading dislocations in patterned 4H-SiC epitaxial growthTSUCHIDA, Hidekazu; TAKANASHI, Ryosuke; KAMATA, Isaho et al.Journal of crystal growth. 2014, Vol 402, pp 260-266, issn 0022-0248, 7 p.Article